on-state current 8 amp ft08...i logic level triac this series of triac s uses a high performance pnpn technology. these devices are intended for ac control applications using surface mount technology. the high commutation performances combined with high sensitivity, make them perfect in all applications like solid state relays, home appliances, power tools, small motor drives... jul - 02 gate trigger current < 5 ma to < 10 ma off-state voltage 200 v ?600 v repetitive peak off state voltage parameter voltage unit symbol v drm v rrm b 200 v m 600 d 400 ipak (plastic) mt1 mt2 g mt2 absolute maximum ratings, according to iec publication no. 134 rms on-state current non-repetitive on-state current non-repetitive on-state current fusing current peak gate current peak gate dissipation gate dissipation critical rate of rise of on-state current operating temperature range storage temperature range lead temperature for soldering i t(rms) parameter conditions min. max. unit symbol i tsm i tsm i 2 t i gm p gm p g(av) t j t stg t l all conduction angle, t c = 110 ? half cycle, 60 hz half cycle, 50 hz t p = 10 ms, half cycle 20 ? max. 20 ? max. 20 ms max. 10s max. 8 84 80 36 20 -40 -40 a a a a 2 s a w w a/? ? ? ? 4 10 1 +125 +150 260 di/dt tr 100 ns, f = 120 hz t j = 125 ? i g = 2 x i gt
ft08...i logic level triac jul - 02 electrical characteristics gate trigger current off-state leakage current on-state voltage gate trigger voltage gate non trigger voltage holding current latching current critical rate of voltage rise parameter conditions sensitivity unit symbol i gt i drm v d = 12 v dc , r l = 33 w ma 1 5 1.55 1.3 0.2 1.6 100 ma ? v v v ma ma v/? a/ms max max max max max min max max max min min min min /i rrm v tm v gt v gd i h * i l dv / dt* r th(j-a) thermal resistance junction-ambient t j = 25 ? v r = v drm , i t = 11 amp, tp = 380 ?, t j = 25 ? v d = 12 v dc , r l = 33 w , t j = 25 ? i t = 100 ma , gate open, t j = 25 ? i g = 1.2 i gt , t j = 25 ? v d = 0.67 x v drm , gate open t j = 125 ? quadrant q1?3 q4 q1?3 q1?3 q1,q3 q2 v d = v drm , r l = 3.3k w , t j = 125 ? ?/w ?/w (*) for either polarity of electrode mt2 voltage with reference to electrode mt1. r th(j-c) thermal resistance junction-case (di/dt)c* critical rate of current rise (dv/dt)c= 0.1 v/? t j = 125 ? (dv/dt)c= 15 v/? t j = 125 ? without snubber tj = 125 ? t j = 125 ? part number information fagor triac current case voltage sensitivity f t 08 07 b i 00 forming tu packaging 08 10 15 20 30 100 5.4 2.8 07 5 7 10 10 15 20 3.5 1.8 t j = 25 ? v r = v rrm ,
jul - 02 fig. 1: maximum power dissipation versus average on-state current fig. 2: average and dc on-state current versus case temperature fig. 4: relative variation of gate trigger current and holding current versus junction temperature i gt , i h, il (tj) / i gt , i h, il (tj = 25 ?) ft08...i logic level triac i t(rms) (a) 0 2 10 8 6 4 2 0 4 6 8 p (w) tj (?) tc (?) i t(av) (a) 1 3 5 7 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 -40 0 2.0 1.6 1.2 0.8 0.4 0.0 40 80 120 -20 20 60 100 a 180 a a = 180 1.0 k = [zth(j-c) / rth (j-c)] fig. 3: relative variation of thermal impedance junction to case versus pulse duration 1e-3 1e-2 1e-1 1e+0 tp (s) 0.5 0.2 0.1 140 i h & il i gt a = 180 dc 1 10 100 1000 fig. 5: non repetitive surge peak on-state current versus number of cycles 80 70 60 50 40 30 20 10 0 i tsm (a) number of cycles tj initial = 25 c 500 1 10 i tsm (a). i 2 t (a 2 s) fig. 6: non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of i 2 t. tp(ms) 2 5 100 10 i 2 t i tsm tj initial = 25 ?
ft08...i logic level triac package mechanical data ipak to 251-aa marking: type number weight: 0.2 g
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